The Silicon Photomultiplier (SiPM) detection principle is using the quantum nature of the electromagnetic radiation. The SiPM structure is based on the array of submicron semiconductor micro-cells with density of few thousands per mm2, working in breakdown mode with integrated quenching elements and common electrode. All micro-cells are identical and independent provided internal gain of amplification of order 10^5 – 10^6 and allowed detection up to single photon at ro om temperature. The interest to the Silicon Photomultipliers is dramatically increasing during last few years. Now status of SiPM is a real substitution of the conventional photomultiplier Tubes and other photo detectors for the low photon flux detection systems in many areas of applications. New area of the application of the principles of the micro pixel structures as Silicon Photomultiplier is development of the coordinate sensitive detectors with high resolutions. This activity is already started and will be discussed.